Транзистор IRF5210

IRF5210 Транзистор полевой P-канальный (Vds=
100V, Id=
40A@
T=
25C, Id=
29A@
T=
100C)
Технические характеристики IRF5210: Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Серия HEXFETFET Type MOSFET P-Channel, Metal OxideFET Feature Standard
Rds On (Max) @ Id, Vgs60 m
Ohm @ 24A, 10VDrain to Source Voltage (Vdss)
100VCurrent - Continuous Drain (Id) @ 25° C40AVgs(th) (Max) @ Id4V @ 250µAGate Charge (Qg) @ Vgs180nC @ 10VInput Capacitance (Ciss) @ Vds2700pF @ 25VPower - Max3.8WТип монтажа Выводной
Корпус (размер)
TO-262-3 (Straight Leads)
КорпусTO-262